Researchers at Berkeley Lab have created the world’s first fully 2D field-effect transistors (FET). These 2D FETs are made from silicon and have no performance drop-off when exposed to high voltages and provide high electron mobility.
These devices were created from transition metal dichalcogenide, hexagonal boron nitride and graphene layers that were stacked through van der Waals interactions. Using van der Waals interactions, the team found that this technique provides a unique structure to the device where the component thickness is well-defined without surface roughness.
Read more about the 2D FETs created at the Berkeley Lab and the possible applications for them.