A more thorough “in-between calibration cycle” check of the ESD simulator’s output waveform is something every EMC engineer and technician should consider.
TCAD simulation can identify ESD relevant effects and the internal operation of a device under ESD stress conditions that are not generally accessible through conventional measurement techniques. TCAD simulation can help to reduce IC and device design cycle times, resulting in the more timely introduction of innovative products to market.
Controlled environment testing of static control flooring in combination with multiple forms of ESD footwear during the qualification phase can reveal problems and is a mandatory step to avoid installing non-compliant flooring/footwear systems.
It is no trivial matter to properly interpret system level test results on high-speed boards. Board manufacturers (OEMs) assess the ESD robustness of their system by means of gun testing, not always in accordance with the IEC standard.
Each component in an ESD protected area (EPA) plays a vital part in the fight against electrostatic discharge (ESD). If just one component is not performing correctly, you could harm your ESD sensitive devices potentially costing your company a lot of money.
Tests and manufacturing results have proven that some static dissipative materials can still produce significant and possibly damaging discharge currents.
The electronics industry is continually shifting. Device circuitry density and technology is more complex. Electronics manufacturing is more heavily reliant on out-sourcing. The ESD industry seems to have jumpe... Read More...
The models and test procedures used to characterize, determine, and classify the sensitivity of components to ESD.
ESD control program plan requirements: training and compliance verification auditing. Per ANSI/ESD S20.20 and IEC 61340-5-1, the written ESD control plan is to include a training plan and a compliance verification plan.
Basic static control procedures and materials that will become part of your ESD control program.