SiC

GaN/SiC Transistors for Your Next Design: Fight or Flight?

This article offers some useful insights and guidelines on how to effectively design and test systems using wide band gap devices to optimize product performance and achieve EMC compliance.

Cree Power Modules Revolutionize Inverter Platform for Power Generation Systems

Cree, Inc. has expanded the award-winning silicon carbide (SiC) 1.2 kV six-pack power module...

Cree Introduces Industry’s First 1.7kV All-SiC Power Module

Cree, Inc. continues to extend its leadership in silicon carbide (SiC) power device technology...

Cree Introduces the Industry’s Most Powerful SiC Schottky Diodes

Cree, Inc. has introduced the new CPW5 Z-Rec® high-power silicon-carbide (SiC) Schottky diodes, the...

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