GaN/SiC Transistors for Your Next Design: Fight or Flight?
This article offers some useful insights and guidelines on how to effectively design and test systems using wide band gap devices to optimize product performance and achieve EMC compliance.
Cree Power Modules Revolutionize Inverter Platform for Power Generation Systems
Cree, Inc. has expanded the award-winning silicon carbide (SiC) 1.2 kV six-pack power module family with a new 20A all-SiC module ideally suited for 5-15 kW three-phase applications. Based on Cree’s C2M™ Si... Read More...
Cree Introduces Industry’s First 1.7kV All-SiC Power Module
Cree, Inc. continues to extend its leadership in silicon carbide (SiC) power device technology with the release of the industry’s first all-SiC 1.7kV power module in an industry standard 62mm housing. Power... Read More...
Cree Introduces the Industry’s Most Powerful SiC Schottky Diodes
Cree, Inc. has introduced the new CPW5 Z-Rec® high-power silicon-carbide (SiC) Schottky diodes, the industry’s first commercially available family of 50 Amp SiC rectifiers. Designed to deliver the cost reductio... Read More...