Mirko Scholz

The ESDA technology roadmap is written to support and guide the daily work of ESD and latch-up experts in the worldwide industry and academia.

In this article we discuss the MOS transistor in the role of ESD protection for high-voltage applications and take a look into a possible future of ESD protection devices for high-performance computing applications.

2.5D/3D integration is an Integrated Circuit (IC) packaging technique that allows the combination of dies of the same or different technologies in the same IC package.

Nowadays in the semiconductors industry, the bipolar transistor is massively used for various functions in modern integrated circuits (ICs) products.

Reliability issues need to be continuously addressed during technology development as technologies further advance into novel transistor structures such as FinFETs and Multi-gate devices.

This article reviews some of the ESD protection design challenges when designing in a FinFET technology and give an outlook on the successors of FinFET.