Within the past 18 years, many studies exploring 3 µm to 7 nm technologies have demonstrated the excellent correlation of CC-TLP with CDM in terms of stress current failure threshold as well as electrical failure and physical damage signature.
The 16.6 ohm implementation of contact CDM (LICCDM) recently published in ANSI-ESD Standard Practice 5.3.3 is shown to produce waveforms of similar shape, Ifail, and Ipeak vs. Ceff dependency as JS-002. The non-monotonicity of JS-002 at low voltages is overcome using LICCDM. A path to joint standardization with air discharge testing is proposed.
In today’s tightly packed layouts, most integrated circuits (ICs) end up with parasitic bipolar transistors (pnp and npn) somewhere.
Several new transistor architectures have been proposed to achieve more powerful computing capability. In this article, we will look at the impacts of these transistor architectures on ESD reliability.
The 2020 EOS/ESD Symposium featured a new EMC Special Session, organized in cooperation between the EMC Society and EOS/ESD Association. This Special Session was planned to emphasize the relationship between EMI/EMC and ESD.
The EOS/ESD Association is addressing the various vectors of development needed to support 3D packaging ESD integration and manufacturing ESD control.
Can you continue aiming for typical CDM protection levels? Introduction The ESD Design Window (ESD-DW) has been steadily shrinking over time due to technology scaling not only from a smaller feature size but ... Read More...
Historical Background CDM is an important model for ESD qualification. The well-known CDM refers to the discharge of an IC package to a grounded surface, whether from automatic handlers in a production area o... Read More...
As innovation comes from many sources, it is difficult to predict or accurately forecast future display technology development. Curved and flexible displays were introduced as the most innovative display technology achievement along with OLEDs in the last 10 years.