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EOS/ESD Symposium

Device Failure from the Initial Current Step of a CDM Discharge

CDM discharges exhibit a fast initial current step when the stray capacitance of the pogo pin is charged. It is demonstrated that the high slew rate can damage sensitive gate oxides. The miscorrelation of CDM and CC-TLP methodologies is addressed by applying pulses with 20 ps rise time.

2019 ESD Symposium Year-In-Review: ESD and EMC Commonalities

A featured Year-In-Review (YIR) presentation was given at the recent 2019 EOS/ESD Symposium by Alan...

New Sessions Announced for Upcoming Symposium

New Sessions Announced for Upcoming Symposium

Do Devices on PCBs Really See a Higher CDM-like ESD Risk?

There are several scenarios where integrated circuits (ICs) are mounted on printed circuit boards (PCBs) which might be charged-up and experience CDM-like events.

2016 EOS/ESD Symposium Call For Papers

The ESD Association is requesting abstracts for technical papers covering the effects of electrostatic...
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Registration is now open for the 37th Annual EOS/ESD Symposium

Register now for the 37th Annual EOS/ESD Symposium September 27- October 2, 2015 being...

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