EOS/ESD Association

Secondary discharges during Field-Induced CDM testing aren't just measurement anomalies—they're real stress events caused by mechanical bouncing of the pogo pin. This groundbreaking investigation reveals how contact vibrations trigger unintended zaps with opposite polarity, provides electrical proof of the mechanism, and offers practical solutions to prevent this hidden reliability threat.

High-speed automotive serial links supporting ADAS features face a critical challenge: meeting stringent system-level ESD requirements while maintaining signal integrity at 10+ Gbps. This column presents an innovative on-chip protection architecture embedding ESD clamps within T-coil circuits, achieving 8kV ISO protection while supporting data rates exceeding 36 Gbps.Retry

Real-world ESD discharge currents during semiconductor assembly differ dramatically from standard test predictions. A new Discharge Current Sensor reveals that actual currents are lower but faster than expected, challenging current protection designs for Multi-Chip Modules and Systems in Package.

USB-C's high-speed data lines need robust ESD protection, but TVS device placement matters critically. New research reveals why positioning protection behind AC coupling capacitors—not in front—delivers superior IC protection for sensitive SuperSpeed applications.

Traditional Charged Device Model testing falls short for bare dies in 2.5D/3D devices. With discharge currents reaching 500 mA at just 5V, existing methods can't handle the unique challenges of testing unpackaged components. CCTLP emerges as a promising alternative for reliable low-voltage testing.

The ANSI/ESD S20.20 standard has become the cornerstone for developing effective ESD control programs. This standard is essential for safeguarding sensitive electronic components and minimizing failure rates.

This column explores the significant impact of artificial intelligence on advancements in silicon fabrication, focusing on the development of high bandwidth memory (HBM) and associated die-to-die(D2D) electrostatic discharge (ESD) protection challenges.

This text discusses ESD/ESA control in semiconductor fabs, highlighting challenges with S20.20 certification, the importance of grounding conductive materials, managing insulative materials, and using ionization for charge neutralization in wafer manufacturing processes.

The article discusses ESD protection challenges for RF switches in SOI technology. It examines the self-protection mechanism, proposes a behavioral model to simulate ESD response more accurately, and explores predicting failure current levels critical for reliable ESD design.

It is now well known that testing for CDM ESD evaluation is becoming a bigger challenge. An alternate approach called capacitively coupled transmission line pulsing (CCTLP) offers advantages over standard field-induced CDM testing.