EOS/ESD Association

The article discusses ESD protection challenges for RF switches in SOI technology. It examines the self-protection mechanism, proposes a behavioral model to simulate ESD response more accurately, and explores predicting failure current levels critical for reliable ESD design.

It is now well known that testing for CDM ESD evaluation is becoming a bigger challenge. An alternate approach called capacitively coupled transmission line pulsing (CCTLP) offers advantages over standard field-induced CDM testing.

The ESDA technology roadmap is written to support and guide the daily work of ESD and latch-up experts in the worldwide industry and academia.

In Part 1 of the article, we reviewed what EDA tools are good for. Here we will discuss EDA tool limitations.

Going back several decades, Electrostatic Discharge (ESD) design and layout checks that were done manually were laborious and time-consuming, let alone not confidently reliable.

In this article we discuss the MOS transistor in the role of ESD protection for high-voltage applications and take a look into a possible future of ESD protection devices for high-performance computing applications.

As long as integrated circuits migrate to new technologies and advances are made in packaging more integrated circuit dies into a single package, the CDM challenge is going to get harder.

It is a common misconception that designing an IC for system-level ESD requirements simply requires an increase in the capability of the ESD cells, which are already present for safe handling ESD requirements, like Human Body Model (HBM).

2.5D/3D integration is an Integrated Circuit (IC) packaging technique that allows the combination of dies of the same or different technologies in the same IC package.

Nowadays in the semiconductors industry, the bipolar transistor is massively used for various functions in modern integrated circuits (ICs) products.