charged device model

Secondary discharges during Field-Induced CDM testing aren't just measurement anomalies—they're real stress events caused by mechanical bouncing of the pogo pin. This groundbreaking investigation reveals how contact vibrations trigger unintended zaps with opposite polarity, provides electrical proof of the mechanism, and offers practical solutions to prevent this hidden reliability threat.

Real-world ESD discharge currents during semiconductor assembly differ dramatically from standard test predictions. A new Discharge Current Sensor reveals that actual currents are lower but faster than expected, challenging current protection designs for Multi-Chip Modules and Systems in Package.

A Charged Device Model (CDM) simulation method has been demonstrated to predict CDM fail current of receiving circuits with gate oxide connected to pad. This method involves inclusion of 20ps rise time edge into the stimulus. It was shown previously that this fast rise time component of the pulse can cause the gate oxide damage. The simulation method is intended as a schematic-level tool during pre-silicon design phase to deliver CDM ESD protection. Simulation results are verified by silicon results with qualification CDM test on package and Transmission-Line-Pulse (TLP) measurements on wafer-level.

It is now well known that testing for CDM ESD evaluation is becoming a bigger challenge. An alternate approach called capacitively coupled transmission line pulsing (CCTLP) offers advantages over standard field-induced CDM testing.

This blog explains CDM ESD testing using the field-induced (FI) method, which is important for semiconductor manufacturers. It covers building a CDM-FI tester, waveform details and verification, and qualification nuances. 

The behavior of ultra-high-speed interfaces is complex, involving fast-rise time waveforms and on-die transient phenomena that cause device failure at lower CDM levels.

Most ESD experts consider CDM testing to be the most critical ESD qualification test for modern integrated circuits. ESD control engineers need to know the charged device ESD robustness of all components passing through their manufacturing line. CDM measurements provide that knowledge.

Can you continue aiming for typical CDM protection levels? Introduction The ESD Design Window (ESD-DW) has...

CDM discharges exhibit a fast initial current step when the stray capacitance of the pogo pin is charged. It is demonstrated that the high slew rate can damage sensitive gate oxides. The miscorrelation of CDM and CC-TLP methodologies is addressed by applying pulses with 20 ps rise time.

The voltage based CDM classification has practically no meaning for IP qualification. In this article, we propose an alternative CDM qualification, which is based on a peak current criterion.