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Advanced CDM Simulation Methodology for High-Speed Interface Design

A Charged Device Model (CDM) simulation method has been demonstrated to predict CDM fail current of receiving circuits with gate oxide connected to pad. This method involves inclusion of 20ps rise time edge into the stimulus. It was shown previously that this fast rise time component of the pulse can cause the gate oxide damage. The simulation method is intended as a schematic-level tool during pre-silicon design phase to deliver CDM ESD protection. Simulation results are verified by silicon results with qualification CDM test on package and Transmission-Line-Pulse (TLP) measurements on wafer-level.

Voltage to Current Correlation for CDM Testing

It is now well known that testing for CDM ESD evaluation is becoming a bigger challenge. An alternate approach called capacitively coupled transmission line pulsing (CCTLP) offers advantages over standard field-induced CDM testing.

Product Insights: Charged Device Model ESD Testing

This blog explains CDM ESD testing using the field-induced (FI) method, which is important for semiconductor manufacturers. It covers building a CDM-FI tester, waveform details and verification, and qualification nuances. 

Updated Trends in Charge Device Model (CDM)

As long as integrated circuits migrate to new technologies and advances are made in packaging more integrated circuit dies into a single package, the CDM challenge is going to get harder.

Low Voltage Charged Device Model (CDM) Testing at a Crossroads

Most ESD experts consider CDM testing to be the most critical ESD qualification test for modern integrated circuits. ESD control engineers need to know the charged device ESD robustness of all components passing through their manufacturing line. CDM measurements provide that knowledge.
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What Are the Advantages of Capacitively Coupled TLP (CC-TLP)?

Within the past 18 years, many studies exploring 3 µm to 7 nm technologies have demonstrated the excellent correlation of CC-TLP with CDM in terms of stress current failure threshold as well as electrical failure and physical damage signature.

Toward Standardization of Low Impedance Contact CDM

The 16.6 ohm implementation of contact CDM (LICCDM) recently published in ANSI-ESD Standard Practice 5.3.3 is shown to produce waveforms of similar shape, Ifail, and Ipeak vs. Ceff dependency as JS-002. The non-monotonicity of JS-002 at low voltages is overcome using LICCDM. A path to joint standardization with air discharge testing is proposed.

Advances in CMOS Technologies Leading to Lower CDM Target Levels

Can you continue aiming for typical CDM protection levels? Introduction The ESD Design Window (ESD-DW) has...

Evolution of Charged Device Model ESD Target Requirements

Historical Background  CDM is an important model for ESD qualification. The well-known CDM refers to...

Device Failure from the Initial Current Step of a CDM Discharge

CDM discharges exhibit a fast initial current step when the stray capacitance of the pogo pin is charged. It is demonstrated that the high slew rate can damage sensitive gate oxides. The miscorrelation of CDM and CC-TLP methodologies is addressed by applying pulses with 20 ps rise time.
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