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ON Semiconductor Introduces New Family of Low Voltage Power MOSFETs that Reduce Losses to Meet Industry Demand for Greater Efficiency

ON Semiconductor has introduced a new family of six N-channel Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) that have been designed and optimized to deliver industry leading efficiency compared to existing devices on the market.

The new NTMFS4Hxxx and NTTFS4Hxxx series of MOSFETs  are ideally suited as switching devices for a wide range of applications including server and networking equipment and high power density DC-DC converters, or to support synchronous rectification in point-of-load (PoL) modules. Versions of these MOSFETS are available with or without an integrated Schottky diode that can help engineers achieve even greater efficiency.

ON Semiconductor recognizes the ever-increasing focus on the energy efficiency of end product performance, and has optimized the design, materials and packaging of the new power MOSFETs to reduce losses. Best-in-class RDSon performance of 0.7 milliohms (mΩ) and low input capacitance of 3780 picofarads (pF) ensure conduction, switching and driver losses are minimized. Careful consideration has also been given to ensure that the MOSFETs offer improved thermal performance and low package resistance and inductance compared to existing devices.

- Partner Content -

Magnetic Field Conversions

This download provides a table of magnetic field conversion factors of microvolts-per meter, gauss, picotesla, microampere-per-meter, weber per-square meter, and gamma with values of either 0 db or 1 as a starting point.

For more information, visit www.onsemi.com

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