ON Semiconductor has expanded its NGBTxx family of 1200 volt trench field stop insulated gate bipolar (IGBT) devices with nine new energy efficient solutions. These new devices improve overall system efficiency, lower power dissipation and improve system reliability. The devices are suitable for motor control, solar and uninterruptable power supply applications.
“Dramatic increases in global energy consumption and projected unfavorable environmental and economic impacts continue to drive demand for higher performance power discrete components,” said John Trice, senior director and general manager for ON Semiconductor’s Power Discrete products. “This new generation of devices brings cost-effective, industry-leading power efficiency without sacrificing robustness. With ON Semiconductor’s proprietary Trench Field Stop Technology, we can now give engineers a greater breadth of options to choose from when implementing their power system designs.”
For more information, visit www.onsemi.com.
