Leveraging ON Semiconductor’s proprietary Trench Field Stop II technology along with rugged ultrafast fast recovery diodes, the NXH80T120L2Q0PG PIM module is configured in 1200 volt (V), 80 A half-bridge and 600 V, 50 A neutral point clamp T-type topology, attaining efficiencies in excess of 98 percent. The configurable package platform employs high-power direct-bonded-copper (DBC) substrate technology along with proprietary press-fit pins to provide customers with a high performance and reliable power module solution.
ON Semiconductor’s expansion into the PIM market is rooted in more than 30 years of experience in automotive ignition IGBTs and intelligent power module (IPM) development. The NXH80T120L2Q0PG PIMs employ ON Semiconductor’s extensive packaging expertise, and are fully qualified to the highest industry standards for reliability at junction temperatures (Tj) of 175°C. In addition, ON Semiconductor module solutions provide customers with a fully-integrated supply chain for silicon and packaging, ensuring high quality and cost efficiencies.
“Power integrated modules are an integral part of our Power Vision to expand into higher power industrial and automotive markets,” said Paul Leonard, vice president and general manager for ON Semiconductor’s Power Discrete Products. “This new, extremely rugged, power module platform is a continuation of our commitment to provide a full portfolio of power discrete and module solutions, enabling our customers to meet their needs for high efficiency, high density power solutions.”
