Cree’s silicon-carbide (SiC) technology continues to enable smaller, lighter, more efficient and lower-cost power systems with a new all-SiC 300A, 1.2kV half-bridge module. Packaged in industry-standard 62mm housing, the new module reduces energy loss due to switching by more than five times compared to the equivalent silicon solution. This best-in-class efficiency enables for the first time all-SiC high power converters rated up to the megawatt level, extending Cree’s leadership in SiC chip technology into high current power modules.
The new all-SiC 62mm half-bridge module’s game-changing switching efficiency and performance allow designers to reduce the amount of magnetic and cooling elements, delivering double the power density and a lower system cost while also reducing end user cost of ownership. Offering a simplified two-level topology that is feasible at higher frequencies, the new module can also eliminate the need to invest in multi-level silicon-based solutions.
The latest Cree® SiC power module is available with multiple gate driver options and is pin compatible to standard 62mm half-bridge modules, including IGBT modules rated at 450A or more. This allows designers to quickly and easily evaluate the module’s unparalleled capabilities.
Visit www.cree.com/power/CAS300M12BM2 for more information and access to data sheets, material content and application notes.
