ETS-Lindgren’s 8000-068 RF Power Amplifier

The 8000-068 provides very low distortion and tolerance for 100% mismatch.

Designed to maximize performance, efficiency, and reliability, ETS-Lindgren utilizes several technologies including pulsed traveling-wave-tube (PTWT), laterally double-diffused metal oxide semiconductor (LDMOS), gallium arsenide (GaAs), and our latest 600 MHz to 6 GHz set of amplifiers based on gallium nitride (GaN) as utilized in the ETS-Lindgren 8000-068 RF power amplifier. These technologies allow ETS-Lindgren to match an ideal amplifier technology to an application based on frequency range and power requirements.

The ETS-Lindgren 8000-068 is part of a newly added ETS-Lindgren family of amplifiers starting from 600 and 1000 MHz up to 6 GHz to meet a wide variety of Radiated Immunity requirements per IEC/EN 61000-4-3 and IEC 60601-1-2. These Class A type amplifiers make ETS-Lindgren amplifiers suitable for levels requiring 3 to 30 V/m. The linear power outputs range from 15W up to 200 Watts supplied by our 8000-068.


1301 Arrow Point Dr.
Cedar Park, Texas 78613
(512) 531-6400

Utilizing GaN technology, this RF amplifier provides higher linearity, rugged design and better efficiency performance versus silicon-based amplifiers.

Beyond maximizing performance, efficiency, and reliability, ETS-Lindgren amplifiers, including the 8000-068, provide remote control interfaces allowing users to interface amplifiers with the ETS-Lindgren EMCenter and ETS-Lindgren’s TILE! or other EMC software applications. This allows for remote access to ETS-Lindgren amplifiers and provides for easy integration as part of a comprehensive EMC, automotive, or microwave test system.

ETS-Lindgren’s expertise does not end with the design, manufacturing, and servicing of amplifiers. ETS-Lindgren provides comprehensive EMC, automotive, and microwave solutions including the design, fabrication, installation, and training of comprehensive EMC test systems, which includes components like the 8000-068 RF Power Amplifier.

Product Features

  • IEC/EN 61000-4-3, for > 10 V/m
  • High Reliability
  • GaN Design – Class A
  • Dual Coupled Sample Port
  • Excellent Performance
  • Efficiency Safety Interlock

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