The 8000-068 provides very low distortion and tolerance for 100% mismatch.
Designed to maximize performance, efficiency, and reliability, ETS-Lindgren utilizes several technologies including pulsed traveling-wave-tube (PTWT), laterally double-diffused metal oxide semiconductor (LDMOS), gallium arsenide (GaAs), and our latest 600 MHz to 6 GHz set of amplifiers based on gallium nitride (GaN) as utilized in the ETS-Lindgren 8000-068 RF power amplifier. These technologies allow ETS-Lindgren to match an ideal amplifier technology to an application based on frequency range and power requirements.
The ETS-Lindgren 8000-068 is part of a newly added ETS-Lindgren family of amplifiers starting from 600 and 1000 MHz up to 6 GHz to meet a wide variety of Radiated Immunity requirements per IEC/EN 61000-4-3 and IEC 60601-1-2. These Class A type amplifiers make ETS-Lindgren amplifiers suitable for levels requiring 3 to 30 V/m. The linear power outputs range from 15W up to 200 Watts supplied by our 8000-068.
1301 Arrow Point Dr.
Cedar Park, Texas 78613
Utilizing GaN technology, this RF amplifier provides higher linearity, rugged design and better efficiency performance versus silicon-based amplifiers.
Beyond maximizing performance, efficiency, and reliability, ETS-Lindgren amplifiers, including the 8000-068, provide remote control interfaces allowing users to interface amplifiers with the ETS-Lindgren EMCenter and ETS-Lindgren’s TILE! or other EMC software applications. This allows for remote access to ETS-Lindgren amplifiers and provides for easy integration as part of a comprehensive EMC, automotive, or microwave test system.
ETS-Lindgren’s expertise does not end with the design, manufacturing, and servicing of amplifiers. ETS-Lindgren provides comprehensive EMC, automotive, and microwave solutions including the design, fabrication, installation, and training of comprehensive EMC test systems, which includes components like the 8000-068 RF Power Amplifier.