Cree, Inc., a leading global supplier of silicon carbide (SiC) based power products — including SiC MOSFETs, Schottky diodes, and modules — is delivering five technical presentations at the seventh annual IEEE (ECCE 2015), which will take place September 20– 24, 2015 at the Palais des Congrès in Montreal.
Widely recognized as the foremost technical conference and exposition for energy conversion technologies and practices, ECCE 2015 will provide practicing engineers, researchers, entrepreneurs, and other professionals from the electrical and electromechanical energy conversion industries with a wide variety of interactive and multidisciplinary discussions about the latest advances in energy conversion technologies, spanning components and materials, to systems and resources, to applications and practices.
On Monday, September 21, 2015, Cree co-founder and Chief Technology Officer of the Power and RF business unit, Dr. John Palmour, will present “SiC Power Devices: Changing the Dynamics of Power Circuits from 1 to 30kV” during the plenary session spanning 8:00–10:30am in room 517D. In this talk, Palmour will provide attendees with an overview of SiC semiconductors across a wide voltage range, discuss the advantages they provide over silicon technologies, and refute the industry’s common cost rebuttal by recontextualizing the price vs. performance data for SiC and silicon in a system-to-system rather than a component-to-component comparison. Palmour will also briefly discuss a few of the high voltage devices (up to 27kV) that Cree is currently developing.
“The most common knock against silicon carbide is that it’s more expensive than silicon, which it is,” said Palmour. “However, a component-to-component comparison will never be wholly accurate because silicon carbide is vastly superior to silicon with regard to performance. SiC devices make systems less expensive through their ability to operate at much higher frequencies, shrink magnetics, and simplify designs. They can also dramatically cut conduction and thermal management costs in lower frequency applications. Further, SiC devices can even allow designers to switch from multi-level topologies down to less complex two-level designs. So, as an industry, we’ve got to switch the focus of this conversation from the cost of the devices to the cost vs. performance metrics of the entire system.”
The following Cree presentations will also be delivered at ECCE 2015.
- “900V Silicon Carbide MOSFETs for Breakthrough Power Supply Design,” Dr. Adam Barkley, SiC power device application engineer, Cree, Inc.
- Poster Session, Exhibit Hall 220E
- Monday, September 21, 5:00–6:30pm and Tuesday, September 22, 10:30am–12:00pm and 3:30–5:30pm,
- “Advances in SiC and GaN Based Devices, Packaging, and Systems,” John Palmour and Dr. Ty McNutt, director of business development, Cree, Inc.
- Town Hall Meeting, 518C
- Tuesday, September 22, 5:30–7:00pm
- “3.3kV SiC MOSFET Update for Medium Voltage Applications,” Dr. Jeffrey Casady, power business development and program manager, Cree, Inc.
- Power Electronic Modules for MV/HV Applications Session, 524A
- Wednesday, September 23, 2:00–3:40pm
- “10–25kV Silicon Carbide Power Modules for Medium Voltage Applications,” Dr. Brandon Passmore, development electronics packaging engineering manager, Cree, Inc.
- Power Electronic Modules for MV/HV Applications Session, 524A
- Wednesday, September 23, 2:00–3:40pm
For more information about ECCE 2015, Dr. John Palmour, or the ECCE 2015 conference schedule, please click the embedded links here or above. For all other inquiries, please visit http://www.cree.com/Power or email powersales@cree.com.
