Cree, Inc. has expanded the award-winning silicon carbide (SiC) 1.2 kV six-pack power module family with a new 20A all-SiC module ideally suited for 5-15 kW three-phase applications. Based on Cree’s C2M™ SiC MOSFET and Z-Rec® SiC Schottky diode technology, the six-pack module enables designers to unlock the traditional constraints of power density, efficiency, and cost associated with Si-based inverters used in industrial power conversion systems.
The new all-SiC 1.2 kV, 20A six-pack features the industry’s lowest switching losses due to the zero turn-off tail current in the MOSFET and the zero reverse recovery current in the Schottky diode. When compared to similar Si IGBT modules, the new Cree® 20A six-pack module operates at a much lower junction temperature allowing designers to aggressively pursue new paradigms in high frequency and power density without compromising on efficiency.
Cree’s new all-SiC 1.2kV, 20A six-pack power module (part number CCS020M12CM2) and companion gate driver evaluation board (CGD15FB45P) are available at authorized distributors, including Mouser, Digi-Key, and Richardson RFPD/Arrow RF & Power.
Please visit http://www.cree.com/Power/Products/SiC-Power-Modules/SiC-Modules/CCS020M12CM2 for more information and access to data sheets, material content, and application notes.
