Cree, Inc., a market leader in silicon carbide (SiC) power devices, has introduced a new Cree MOSFET design kit that includes all of the components needed to evaluate Cree® MOSFET and Schottky diode performance in a configurable half bridge circuit. Quick and easy to assemble and use, the new design kit enables comparative testing between IGBTs and Cree MOSFETs, and provides an effective layout example for properly driving Cree MOSFETs with minimal ringing. Designed to assist engineers new to the higher switching speeds of SiC devices, the kit provides easy access to critical test points, enabling simple and accurate measurements, including VGS, VDS, and IDS. The kit is also easily configurable to several different power conversion topologies in buck or boost configurations. Half bridge and three-phase configurations can be constructed and analyzed by respectively combing two and three kits.
The design kit includes two 80mOhm, 1200V Cree MOSFETs; two 1200V, 20A Cree Schottky diodes in standard TO-247 packages; a half bridge configured design board equipped with isolated gate drives; power supplies; and all of the other components necessary to assemble the power stage. The kit also includes a gate driver schematic and layout reference for a TO-247-packaged Cree MOSFET, as well as a comprehensive user manual and sourcing sheet with basic block diagrams and specifications.
To learn more about Cree’s new MOSFET design kit, visit response.cree.com/choosewisely.