Cree, Inc. continues to extend its leadership in silicon carbide (SiC) power device technology with the release of the industry’s first all-SiC 1.7kV power module in an industry standard 62mm housing. Powered by Cree’s C2M™ large area SiC chip technology, the new half-bridge module exhibits an impressive 8mOhm on-resistance and 10-times higher switching efficiency than existing silicon (Si) module technology, capable of replacing Si IGBT modules rated at 400A or more. The breakthrough performance of the new 1.7kV all-SiC power module allows design engineers to simultaneously reduce the size and cost of magnetic and cooling elements while achieving superior system efficiency and reliability. Unlike existing silicon-based systems in motor drive, grid-tie and utility scale solar inverter applications, the new Cree® power module also enables lower production costs and the development of smaller, lighter products with a lower overall total cost of ownership.
The new all-SiC 1.7kV, 8mOhm half-bridge module is available as part number
CAS300M17BM2 at preferred distributors, including Mouser, Digi-Key and Richardson RFPD/Arrow RF & Power. Companion gate driver boards have been developed in cooperation with Prodrive, a Netherlands based innovator in power systems design and manufacturing. The boards are available through Cree sales channels or directly from ProDrive. Please visit http://www.cree.com/Power/Products/SiC-Power-Modules/SiC-Modules/CAS300M17BM2 for more information and access to data sheets, material content, and application notes.
