Cree Introduces Industry’s First 1.7kV All-SiC Power Module

Cree Introduces Industry's First 1.7kV All-SiC Power Module | In Compliance Magazine

Cree, Inc. continues to extend its leadership in silicon carbide (SiC) power device technology with the release of the industry’s first all-SiC 1.7kV power module in an industry standard 62mm housing. Powered by Cree’s C2M™ large area SiC chip technology, the new half-bridge module exhibits an impressive 8mOhm on-resistance and 10-times higher switching efficiency than existing silicon (Si) module technology, capable of replacing Si IGBT modules rated at 400A or more. The breakthrough performance of the new 1.7kV all-SiC power module allows design engineers to simultaneously reduce the size and cost of magnetic and cooling elements while achieving superior system efficiency and reliability. Unlike existing silicon-based systems in motor drive, grid-tie and utility scale solar inverter applications, the new Cree® power module also enables lower production costs and the development of smaller, lighter products with a lower overall total cost of ownership.

The new all-SiC 1.7kV, 8mOhm half-bridge module is available as part number

CAS300M17BM2 at preferred distributors, including Mouser, Digi-Key and Richardson RFPD/Arrow RF & Power. Companion gate driver boards have been developed in cooperation with Prodrive, a Netherlands based innovator in power systems design and manufacturing. The boards are available through Cree sales channels or directly from ProDrive. Please visit  for more information and access to data sheets, material content, and application notes.

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