Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, is exhibiting and speaking at this year’s Government Microcircuit Applications and Critical Technology Conference (GOMACTech) — the leading conference for addressing developments in microelectronic devices, circuits, and applications for government systems — which takes place March 23–26, 2015 in St. Louis, MO.
The theme for this year’s conference is “Extending Security in an Insecure World.” As such, presentations will focus on the development of modern defense systems in an era when commercial systems research spending and capabilities significantly outpace that of government systems. They will also posit solutions for utilizing emerging commercial technologies to enable transformational, leap-ahead government technologies and capabilities able to adhere to demanding security measures. Fittingly, on Tuesday, March 24, at 3:30pm, Scott Sheppard, manager of RF R&D at Cree, will open Session 6: Advances in GaN Producibility with “GaN-on-SiC MMIC Production for S-Band and EW-Band Applications,” a presentation about Cree’s Title III production capacity program for GaN-on-SiC MMICs on 100mm-diameter substrates, which focused on optimizing manufacturing capabilities including: reliability, yield, cost, and cycle time while achieving Manufacturing Readiness Level (MRL) eight.
In addition to this presentation, Cree representatives, including Dr. Dave Grider, power program manager, Dr. Jeff Barner, foundry program manager, and Scott Sheppard will be at booths #310 and #312 during expo hours (12:00–8:00pm Tuesday, March 24, and 9:00am–4:00pm Wednesday, March 25) to discuss Cree’s RF foundry production capacity, MRL8 and Category 1A Trusted Foundry designations, and SiC power devices with attendees.
For more information visit www.cree.com/RF.
