Shih-Hung Chen

Shih-Hung Chen received a Ph.D. degree from the Institute of Electronics, National Chiao Tung University, in 2009. Since 2019, he has been ESD team lead and principal member of technical staff (PMTS) at IMEC. He authored or co-authored more than 100 conference and journal publications.

From This Author

Columns

Next to FinFET, How Will ESD Suffer?

Several new transistor architectures have been proposed to achieve more powerful computing capability. In this article, we will look at the impacts of these transistor architectures on ESD reliability.

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