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Alliance Memory Releases 2M x 32 and 4M x 32 High-Speed CMOS SDRAMs

Alliance Memory has extended its 64M and 128M lines of high-speed CMOS synchronous DRAMs (SDRAM) with a new 2M x 32 device in the 90-ball 8-mm by 13-mm by 1.2-mm TFBGA package and a 4M x 32 device in the 86-pin 400-mil plastic TSOP II package.

The devices released today provide reliable drop-in, pin-for-pin compatible replacements for a number of similar solutions in industrial, telecom, and consumer products requiring high memory bandwidth. For these applications, the AS4C2M32S-7TCN and AS4C4M32S-7TCN feature fast access time from clock down to 5.4 ns and fast clock rates to 166 MHz.

Offering a commercial temperature range of 0 °C to 70 °C, the SDRAMs operate from a single +3.3-V (± 0.3 V) power supply and are lead (Pb)- and halogen-free. The devices provide programmable read or write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto pre-charge function provides a self-timed row pre-charge initiated at the end of the burst sequence. Easy-to-use refresh functions include auto- or self-refresh while a programmable mode register allows the system to choose the most suitable modes to maximize performance.

- Partner Content -

A Dash of Maxwell’s: A Maxwell’s Equations Primer – Part One

Solving Maxwell’s Equations for real-life situations, like predicting the RF emissions from a cell tower, requires more mathematical horsepower than any individual mind can muster. These equations don’t give the scientist or engineer just insight, they are literally the answer to everything RF.

For more information, visit www.alliancememory.com.

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