The ESD Association is requesting abstracts for technical papers covering the effects of electrostatic discharge (ESD), electrical overstress (EOS), and static electricity for presentation at the 38th Annual EOS/ESD Symposium, September 8-16, 2016 at the Hyatt Regency, Garden Grove (Anaheim), California, USA.
Papers for the EOS/ESD Symposium should deal with work in the following areas: Advanced CMOS (Analog/Digital) EOS/ESD and Latchup, ESD Protection in Bipolar, RF, High Voltage and BCD Technologies, Numerical Modeling and Simulation for On-Chip ESD Protection, EOS/ESD Failure Analysis, Troubleshooting and Case Studies, Device Testing: Testers, Methods and Correlation Issues, System Level EOS/ESD/EMC, HMM, EOS/ESD Factory Level, Control and Materials Technology, Chip/Module/Package EOS/ESD Electronic Design Automation.
Paper submissions should include data and analysis that advance state-of-the-art knowledge, enhance or review general knowledge, or address new topics. The technical program committee especially encourages new areas and fields relevant to EOS and ESD.
Submissions must include a 50-word abstract and a four-page (maximum) summary of the work. The deadline for submission of abstracts and paper summaries is Friday, February 26, 2016. Late submissions will not be accepted. The final submission deadline for the finished paper is Friday, June 3, 2016. Final papers will be limited to a maximum of 10 pages.
Persons interested in submitting a paper should obtain copies of the Symposium call for papers from the EOS/ESD Association, 7900 Turin Rd., Building 3, Rome, NY 13440; phone: 315-339-6937; email: info@esda.org. The call for papers also may be downloaded from the ESD Association’s website:
https://www.esda.org/assets/Uploads/documents/2016-Call-for-papers.pdf https://www.esda.org/assets/Uploads/documents/2016-Student-Call-for-papers.pdf
Accepted papers covering selected topics may be considered for review for invited publications in IEEE Transactions on Device and Materials Reliability (TDMR), IEEE Transactions on Electron Devices, the Microelectronics Reliability Journal, the Journal of Electrostatics or other appropriate publications.
Students submitting an abstract (first author only) will be eligible for reduced (50% off) Symposium registration fee, and waived fees to all Symposium tutorials.
